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About Us
Power-Semiconductors
GaN-on-Si HEMT
650V
150V
100V
60V
40V
30V
Silicon FET
Opto-Semiconductors
Infrared LED Chips
Photodiode Chips
Phototransistor Chips
CREE LED Chips
EZ Series - P side up
SR Series
SA Series
SD Series
White Color Chips
EZ-N Series (Limited Edition)
TR Series (Limited Edition)
RT Series (Limited Edition)
UT Series (Limited Edition)
MB Series (Limited Edition)
CB Series (Limited Edition)
FOCUS LIGHTINGS
OS Component/Module
General Application
Ceramic Type
EMC Type
PLCC Type
SMD Type
Ultraviolet
ODM Service
LED with AEC-Q
AIoT
Ouster LiDAR
Outsight Software
Contact Us
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EZ850-p
Regular price
$0.00
Default Title -
$0.00 TWD
FEATURES:
Lambertian Radiation Pattern
Anode-up design (p-pad up)
EZBright LED Technology, binned @ 350 mA
450 nm – 520+ mW
460 nm – 500+ mW
470 nm – 480+ mW
Low Forward Voltage (Vf) – 3.2 V Typical at 350 mA
Maximum DC Forward Current – 1000 mA
Backside Metal versions for various attach methods:
-A (AuSn) for use with Conductive Adhesives, Flux Eutectic Attach, Solder Paste & Solder Preforms
-G (LTDA) for Low Temperature Flux Eutectic Attach
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