GaN-on-Si HEMT

NewSemi provides 8" GaN-on-Si HEMT wafer and bare die for power devices.

From 15V to 700V, from 2A to 60A, plus possible customization,

NewSemi is here to provide the best solution and service to the industry.

Please feel free to contact us for further information.

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si

GaN Wafer 氮化鎵第三代半導體 FET MOSFET HEMT 功率晶片 Power Device GaN-on-Si