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About Us
Power-Semiconductors
GaN-on-Si HEMT
650V
150V
100V
60V
40V
30V
Silicon FET
Opto-Semiconductors
Infrared LED Chips
Photodiode Chips
Phototransistor Chips
CREE LED Chips
EZ Series - P side up
SR Series
SA Series
SD Series
White Color Chips
EZ-N Series (Limited Edition)
TR Series (Limited Edition)
RT Series (Limited Edition)
UT Series (Limited Edition)
MB Series (Limited Edition)
CB Series (Limited Edition)
FOCUS LIGHTINGS
OS Component/Module
General Application
Ceramic Type
EMC Type
PLCC Type
SMD Type
Ultraviolet
ODM Service
LED with AEC-Q
AIoT
Ouster LiDAR
Outsight Software
Contact Us
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EZ1950-p
Regular price
$0.00
Default Title -
$0.00 TWD
Features:
Lambertian radiation pattern
Anode-up design (p-pad up)
EZBright LED technology, binned @ 700 mA
450 nm – 1120+ mW
460 nm – 1120+ mW
Low forward voltage (V
F
) – 3.2 V typical at 700 mA
Maximum DC forward current: 3000 mA
Backside metal versions for various attach methods:
A (AuSn) for use with conductive adhesives, flux eutectic attach, solder paste and solder preforms
G (LTDA) for low-temperature flux eutectic attach
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